Abstract: A polyacrylamide/calcium alginate (PAM/CaAlg) hybrid hydrogel membrane was prepared by UV-initiated free-radical polymerization and subsequent Ca2+ ionic crosslinking. Then the PAM/CaAlg membrane was further treated with diammonium hydrogen phosphate (DHP) solutions to induce calcium phosphate. The resulted calcium phosphate/polyacrylamide/calcium alginate (CP/PAM/CaAlg) hybrid hydrogel membrane was immersed in bovine serum albumin (BSA) aqueous solution for sufficient adsorption. BSA was used as a model protein to investigate the controlled-release behavior of the hybrid hydrogel membranes. The effects of acrylamide/sodium alginate mass ratio, DHP concentration and saline treatment on the swelling behavior and BSA release performance were studied. The morphology of the hydrogel membranes was characterized by scanning electron microscopy (SEM). The results showed that the CP/PAM/CaAlg hybrid hydrogel membranes exhibited a porous structure, which facilitated BSA loading. Meanwhile, the calcium phosphate phase and the hybrid polymer network helped regulate the diffusion pathway of BSA, thereby improving the sustained-release performance. The swelling behavior of the membranes could be regulated by changing the polymer composition and the concentration of DHP. Compared with saline-treated membranes, the phosphate-treated membranes showed better sustained-release performance for BSA in Tris-HCl buffer. The prepared CP/PAM/CaAlg hybrid hydrogel membranes have potential application as protein drug controlled release. Read More

Abstract: In this paper, ZnS/SnO2 composite photocatalysts with different molar ratios were prepared by a two-step hydrothermal method. The influence of ZnS composite ratio on the material structure, morphology, optical properties and photocatalytic performance was systematically investigated. XRD and XPS results indicate that the SnO precursor is completely transformed into rutile SnO2 during the hydrothermal process, and ZnS is composited on the SnO2 surface in the form of cubic sphalerite, forming a heterostructure rather than a solid solution. SEM, TEM and EDS show that the composite exhibits a porous nano-aggregate morphology with a close heterojunction interface formed between ZnS and SnO2. BET analysis reveals that the material possesses a mesoporous structure with a specific surface area of 14.36 m2/g. UV-vis absorption spectra show that the absorption edge of the composite is red-shifted, extending the photoresponse range to the visible region. The photocatalytic degradation experiments of rhodamine B (RhB) demonstrate that the composite with a ZnS ratio of 80% (0.8-ZnS/SnO2) exhibits the best performance, achieving a degradation rate of 93.52% within 70 min and a reaction rate constant of 3.74×10-2 min-1, which is about 5 times that of commercial P25. Cyclic catalytic tests prove that the composite has good reusability and photostability. This study provides a feasible synthesis strategy and structural optimization basis for constructing efficient type II heterojunction photocatalysts. Read More

Abstract: In order to clarify the functional integration modes and performance optimization directions of semiconductor chips and integrated circuits in smart electronic devices, this paper combines the 2024-2025 measured industrial data of the semiconductor industry to sort out the development history of chip integration technologies, analyze the practical roles of SoC (System on Chip) and Chiplet architectures in functional integration, explore the improvement effects of low-power design, advanced packaging and new materials on chip performance, and summarize the design concepts for the collaborative optimization of chip functionality and performance. Research indicates that by 2025, high-end advanced packaging has become the core technical support for heterogeneous chip integration; the shipment volume of advanced-process high-end SoCs for smartphones continues to rise. Chiplet and high-density interconnect (HDI) technologies can effectively improve the functional integration density of chips, and relevant technological innovations have continuously broken through the performance limitations of traditional silicon-based processes. The optimization strategies summarized in this paper based on practical industrial applications can provide feasible practical references for the design and performance upgrading of chips used in smart electronic devices. Read More

Abstract: In this paper, the mechanism of plasma effect in semiconductor materials and its remarkable influence on the performance of optoelectronic devices are discussed in depth. Plasma effect, as a special physical phenomenon that can be excited in semiconductor, forms a high concentration of free electron and hole plasma state in semiconductor through high intensity illumination or electric field, thus significantly changing the optical and electrical properties of materials. In optics, the plasma effect enhances the nonlinear optical response of semiconductors and improves the ability of light absorption and refractive index control. In electricity, it changes the conductivity of semiconductors, optimizes the current-voltage characteristics, and may lead to self-organization phenomena such as the formation of quantum dots. In light-emitting diodes (LED), the plasma effect significantly improves the luminous efficiency, brightness and stability of LED by enhancing the radiation recombination process. In photodiode, plasma effect promotes the effective separation and transmission of photo-generated carriers, improves the response speed and sensitivity of the device, and optimizes the spectral response range. For solar cells, plasma effect is expected to further improve their photoelectric conversion efficiency by enhancing light absorption and improving charge separation efficiency. In addition, in the laser, the plasma effect also shows the potential to enhance the inversion of particle number in the gain medium and improve the stability of laser output. Read More

Abstract: Using density functional theory calculations, the thermoelectric properties of LaZnSbO have been systematically investigated. The bulk LaZnSbO features a natural super lattice structure with low electrical conductivity and low thermal conductivity. The band structure reveals that it is a direct gap semiconductor having a band gap of 0.73eV. Doping can enhance its conductivity and thereby raise its ZT value. At a temperature of 900K, close to the carrier concentration 2.5×1019/cm3, the p-type doped system shows a Seebeck coefficient of 313μVκ-1, a conductivity of 2.06×104Sm-1 and a power factor of 0.78×10-3Wm-1κ-2. As a result, a thermoelectric figure of merit (ZT) reaches a maximum value of 1.43. Read More